Hot electron tunneling mechanism of current collapse in gan hfet 溝道熱電子隧穿電流崩塌模型
In this paper , the coherent transport characteristics of electrons tunneling through a quantum dot are investigated 摘要研究了電子隧穿通過(guò)量子點(diǎn)的相干輸運(yùn)特性。
It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery 假設(shè)隧道電子從硅進(jìn)入氧化層和界面態(tài)的建立是輻射效應(yīng)的恢復(fù)機(jī)理。
It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate 模擬結(jié)果表明:退火過(guò)程所加?xùn)牌珘旱拇笮∫约八淼离娮有?yīng)與建立的界面態(tài)所占比例的不同影響器件的恢復(fù)率。
The effects of the operation temperatures , gate voltages , drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail . coulomb blockade and single electron tunneling are observed in the devices . 3 詳細(xì)地分析了工作溫度、柵極電壓、漏源電壓和磁場(chǎng)對(duì)其特性的影響,觀測(cè)到明顯的庫(kù)侖阻塞效應(yīng)和單電子隧穿效應(yīng),器件的工作溫度可達(dá)到77k以上。
Transmission coefficient of electron tunneling through rectangular barrier has been calculated based on the exact solution of the one - dimensional time - independent schr ? dinger equation with the transfer matrix method ; furthermore , the dependence of the transmission coefficient on the effective masses and parameters of rectangular barrier also has been studied 摘要利用傳遞矩陣方法精確計(jì)算了一維定態(tài)薛定諤方程,求解出電子穿過(guò)矩形勢(shì)壘的透射系數(shù),進(jìn)一步研究了該透射系數(shù)與有效質(zhì)量和矩形勢(shì)壘參數(shù)的關(guān)系。
We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field . the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells . it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field . the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells . incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells . the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures 對(duì)磁量子結(jié)構(gòu)中電子在外加恒定電場(chǎng)下的輸運(yùn)性質(zhì)進(jìn)行了研究.分別計(jì)算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構(gòu)成的兩種磁量子結(jié)構(gòu)的傳輸概率和電流密度.計(jì)算結(jié)果表明,在相當(dāng)寬廣的非共振電子入射能區(qū),外加電場(chǎng)下電子的傳輸概率比無(wú)電場(chǎng)時(shí)增加.對(duì)于電子隧穿相同磁壘磁阱構(gòu)成的雙磁壘結(jié)構(gòu),共振減弱;對(duì)于電子隧穿不同磁壘磁阱構(gòu)成的雙磁壘結(jié)構(gòu),無(wú)電場(chǎng)作用時(shí)的非完全共振在適當(dāng)?shù)钠秒妷合罗D(zhuǎn)化為完全共振,這時(shí)的電子可實(shí)現(xiàn)理想的共振隧穿.研究同時(shí)表明,磁量子結(jié)構(gòu)中存在著顯著的量子尺寸效應(yīng)和負(fù)微分電導(dǎo)